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New efficiency-improving technique applicable for all types of shunt-diode rectifier is presented. The proposed technique using a harmonic-termination circuit improves the efficiency of conventional shunt-diode rectifiers by nearly 10% at 13.56 MHz. The efficiency of a shunt-diode rectifier was analyzed by using Fourier transform and it is concluded that the efficiency loss can be significantly reduced...
The impact of silicon technology scaling trends and the associated technological innovations on RF CMOS device characteristics are examined. The application of novel strained silicon and high-k/metal gate technologies not only benefits digital systems, but significantly improves RF performance. The peak cut-off frequency (fT) doubles from 209 GHz in the 90 nm node to 445 GHz at the 32 nm node. 1/f...
A 32nm RF SOC technology is developed with high-k/metal-gate triple-transistor architecture simultaneously offering devices with high performance and very low leakage to address advanced RF/mobile communications markets. A high performance NMOS achieves an fT of 420GHz. Concurrently, a low leakage 30pA/um NMOS achieves an fT of 218GHz. Deep-nwell/guard rings improves noise isolation by >50dB. High...
The location of the anchor node in the wireless sensor network is a key component for calculating the location information of other nodes. An anchor node with GPS location aware is implemented in this study. The power of the anchor node is supplied by two 2600 mAh Li-ion batteries charged by the solar energy. The periodic wakeup scheme with an accelerometer trigger is employed. To determine the decision...
An RF transceiver for operation near 24 GHz with an onchip antenna, fractional-N synthesizer and other RF and analog baseband circuits is demonstrated in 130-nm CMOS. A 5-m wireless link was demonstrated using a transceiver pair. A technique for wireless calibration of an on-chip frequency reference is also demonstrated.
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