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A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon layer in the PCM enables low-current reset operation (45 µA) compared to the conventional memory structure. This memory-cell configuration enables both a poly-Si MOS-driven stackable memory array and large degree programming parallelization. A...
We have presented a design method of RF power Si-MOSFETs for low voltage and high power-added efficiency operation. It has been demonstrated that 0.2 /spl mu/m gate length Co-salicided Si MOSFETs can achieve high power-added efficiency of more than 50% at 2 GHz RF operation with sufficient breakdown voltage (V/sub dss/S) by choosing optimum gate oxide thickness and N/sup -/ extension impurity concentration...
New short channel effects with nitride-oxide gate MOSFETs were found, where threshold voltage reduction occurs in a relatively long channel region. These effects would be explained by trapped charges or interface states induced by the mechanical stress at the Si and the nitride-oxide gate film in the course of the heat process.
The effect of a nitrided oxide gate film produced by RTN on the boron penetration from a p+ poly gate electrode was studied. It was found that the RTN oxide gate is very effective for the suppression of boron penetration, even when the nitrogen concentration is as low as a few percent.
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