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Conformity and phase structure of atomic layer deposited TiO 2 thin films grown on silicon substrates were studied. The films were grown using TiCl 4 and Ti(OC 2 H 5 ) 4 as titanium precursors in the temperature range from 125 to 500 °C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 μm depth and aspect...
Atomic layer deposition was applied to fabricate metal oxide films on planar substrates and also in deep trenches with appreciable step coverage. Atomic layer deposition of Ru electrodes was realized on planar substrates. Electrical and structural behaviour of HfO 2 –TiO 2 and Al 2 O 3 –TiO 2 nanolaminates and mixtures as well as Al 2 O 3 films...
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