The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Both direct and indirect band gap transitions are observed in Ge by photoluminescence and electroluminescence. The relative emission intensity of direct band gap transition with respect to indirect band gap transition increases with the increase of the n type doping level, optical pumping power, injection current density, temperature, and strain. The enhancement of direct band gap transition is due...
Plasma immersion ion implantation (PIII) of hydrogen can provide appropriate kinetic energy to passivate the Si/SiO 2 interface. To avoid excessive damage of hydrogen, the implantation is performed with low kinetic energy (100eV). Passivation decreases the dark current and enhances responsivity of metal-oxide-semiconductor tunneling photodetectors. The dependence of photoluminescence (PL)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.