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Transient photoinduced absorption in Ge core and Ge/GeO2 core/shell nanoparticles (NPs) has been studied in visible spectral range. Two distinctive relaxation processes were observed: the fast relaxation with lifetime of several picoseconds corresponds to the carriers transfer from the excitation region to the surrounding interface or defect-related states, and the slow relaxation (tens of picoseconds)...
High quality ZnO and Mo-doped ZnO thin films were fabricated with a dc sputtering method, and XRD and Raman characterizations reveal that Mo atoms were successfully incorporated into ZnO lattice to form a n-type semiconductor. Two-color femtosecond pump and probe results indicate that charge carriers relaxation in pure ZnO film shows biexponential decay processes with an ultrafast component of about...
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