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A significant improvement in 4H-SiC p-IGBTs has been achieved. A differential on- resistance of ˜26 mΩ.cm2 was demonstrated at a gate bias of -16 V at 25°C. A novel current suppressing layer (CSL) was adopted to eliminate the JFET effect and enhance conductivity modulation by suppressing the current conduction through the BJT section. A hole mobility in the inversion channel of 10 cm2/V.s with a threshold...
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