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For the first time, SiC planar p-IGBTs with 5.8 kV of blocking voltage have been fabricated and characterized. The device exhibits a differential on-resistance of ~ 570 mOmegamiddotcm2 at the gate bias of -30 V at 25degC, and decreases to ~ 118 mOmegamiddotcm2 at 200degC, ~108 mOmega middot cm 2 at 300degC, respectively. The median hole mobility in the inversion channel is 2.3 cm2/Vmiddots, and increases...
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