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Product level lifetime margins, determined by HCI and BTI, are shrinking with scaling. We developed highly accurate device-level HCI degradation models that, together with known BTI models, are able to accurately predict frequency degradation of a ring oscillator. We show that despite substantial relief from HCI damage in balanced switching circuits, HCI degradation still accounts for 40-50% of frequency...
Analyzing the electrical degradation of modern flash memory cells by conventional C-Vor charge pumping techniques is hardly possible due to the extremely small gate area. However, 1/f noise measurements can be done since low frequency 1/f noise in the range around 1 Hz produced by stress-generated oxide traps strongly increases in MOSFETs with shrinking area. Here we show that measurements of the...
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