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This paper examines the role of NBTI and PBTI on SRAM Vmin shifts during HTOL stressing and quantifies their impact on reliability lifetime projections in scaled high-k metal gate (HKMG) technologies. Correlation between measured HTOL SRAM Vmin shifts and transistor level parametrics is summarized on both 28nm poly-SiON and HKMG technologies. The paper concludes that the commonly used HTOL acceleration...
The influence of different relaxation biases on positive bias temperature instability (PBTI) recovery is investigated. The threshold voltage (Vth) relaxation after stress is found to be accelerated by OFF-state bias in comparison to zero volt recovery. 2D device simulations evidence an increase in the drain side channel potential as well as an increase in the minimum potential for short channel devices...
Product level lifetime margins, determined by HCI and BTI, are shrinking with scaling. We developed highly accurate device-level HCI degradation models that, together with known BTI models, are able to accurately predict frequency degradation of a ring oscillator. We show that despite substantial relief from HCI damage in balanced switching circuits, HCI degradation still accounts for 40-50% of frequency...
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