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This paper presents the design, implementation, layout and measured results of a single stage 60 GHz Variable Gain Amplifier (VGA). The VGA has been implemented in 0.13 µm SiGe BiCMOS technology with ft/fmax = 250/340 GHz. It provides a tunable gain of −15 to 7 dB. The circuit consumes 32.25 mW of power from 2.5 V supply. It occupies an area of 0.6 mm2 and it is intended to be deployed in miniaturized...
In this paper, a novel printed circuit board (PCB) antenna referred to as Multi-Stub Inverted F Antenna is proposed. The proposed antenna has enhanced radiation in the plane of PCB, as compared to traditional Inverted F Antenna. The proposed Multi-Stub methodology is verified in simulation and measurement by designing antenna at 2.45 GHz, which is widely used in portable wireless consumer products...
In this paper, an ultra low voltage ultra low powerbulk-driven operational-transconductance-amplifier (OTA) isproposed. The proposed OTA operates at power supply of 0.35 Vwith bias current of 25nA and power dissipation in the circuit isbelow 40nW. Simulation results for the OTA shows that circuitachieves gain of 60 dB and 83.2° phase margin (PM) with unitygain bandwidth (UGB) of 31.6 KHz. Proposed...
In the present paper a novel automatic gain control preamplifier for hearing aid device is proposed and analyzed. The proposed design utilizes feedback and feed forward loop in order to control the gain of the device. Input and output thresholds have been accommodated to provide dual control. The weak input signal is amplified in three modes. High gain for low input and low gain for high input forms...
Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.
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