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Orientation dependence and asymmetry of VT (threshold voltage), gm (transconductance), S (subthreshold slope), and Ioff (off-state current at VG =3D 0 V) in 0.18 ??m n-MOSFETs were measured and analyzed. The test structure contains 8 different channel orientation angles of 0??/45??/90?? and three kinds of process conditions. Although VT, gm and S scarcely show particular anisotropy except for the...
A channel length engineering technique for optimization of primitive cells in standard cell libraries is proposed and a test structure to analyze the operation performance and leakage current of 3-input NAND is presented. Since the topmost transistor (Nl) in the three series connected n-MOSFETs of 3-input NAND has the largest VDS, subthreshold leakage current can be reduced by optimizing a channel...
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