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A new measurement method of Tj (junction temperature ), TjDM, of a SiC device installed and operated in a circuit is proposed. Tj of a SiC device has been related to the turn-off waveforms and estimated by the time in the turn-off process. TjS of developed SiCGTs ( SiC Commutated Gate turn-off Thyristors ) under the high voltage half bridge inverter operation at 2 kHz are measured, and are confirmed...
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