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We report on the fabrication of extreme ultraviolet (EUV) hybrid imagers with backside-illuminated detector chip based on aluminum gallium nitride (AlGaN) layers grown on silicon and integrated with CMOS readout chip. The focal plane array (FPA) size is 256 256 pixels with 10- pixel-to-pixel pitch. The devices were characterized at wavelengths from 300 down to 1 nm using synchrotron...
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