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Equilibrium Si contents required to prevent the interfacial reaction in the SiC p /2014 Al composite were predicted using both theoretical calculations and experimental method. According to the results, equilibrium Si contents increased with increasing temperature; When the composite is exposed at temperatures below the solidus of the matrix, less than 1 at.% of Si was found to be sufficient...
Interfacial phenomena in the SiC p /Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al 4 C 3 in the SiC/Al composite were performed by taking the variations in Al and Si activities...
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