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Computational Science became crucial techniques for designing future micro electronics engineering. In this paper, we describe the examples which aim the designing of future micro electronics devices such as charge trap memories and resistive random access memories based on the computational science.
For the fabrication of highly scalable metal-oxide-nitride-oxide-semiconductor (MONOS) type memories, we propose a universal guiding principle, where the interfacial O chemical potential is designed to prevent the formation of defects that undergo irreversible structural changes. Our first principles calculations indicate that O-related defects in SiN charge trap layers in a MONOS-type memory intrinsically...
We have proposed atomistic guiding principles for high program/erase (P/E) cycle endurance MONOS type memories based on first principles calculations. We found that excess O atoms near the SiN/SiO2 interfaces are the cause of memory degradation due to an irreversible structural change during P/E cycles. These results indicate that by suppressing excess O atoms the MONOS characteristics can be effectively...
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