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Pulsed power generators with repetition rates on the order of MHz have been developed by using semiconductor opening switch (SOS), static induction thyristor (SIThy), and silicon carbide junction field-effect-transistor (SiC-JFET). A compact SOS circuit based on inductive energy storage has been developed. It uses semiconductor switches for forward and reverse current control of the SOS diodes, instead...
Power semiconductor devices (MOSFET, IGBT, SIThy, and SOS) have been studied for applications in repetitive pulsed power generation. These switching devices are expected to be used in pulsed high-voltage modulators for accelerators and power supplies for pulsed atmospheric discharges. MOSFET and static-induction thyristor (SIThy) are investigated for their performance in high-voltage modulation at...
Fast switching of high voltage using stacked MOSFETs has been studied. It is shown that the effective drain-source capacitance has a negative influence in the turn-off process, especially when the load impedance is relatively high. In order to solve this problem, an alternative circuit configuration is tested where additional switching modules are used to deal with the drain-source capacitance. The...
Power semiconductor devices have been used in development of various pulsed power generators for industrial applications. A repetitive pulsed high-voltage modulator using power MOSFETs has been developed for accelerator applications. It is capable of high-speed switching of 2kV at repetition rate of 1 MHz. This modulator, operating in continuous mode at average power level of 30 kW, has played an...
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