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This paper is intended to give insights into the forming process and characteristics of aluminum back surface field (Al-BSF) made by thermal evaporation and conventional thermal processing. It is indicated that Al-BSF formation is the result of the recrystallization of silicon and the dissolved silicon is responsible for the BSF thickness. A sufficient oxygen supply at the early stage of firing process...
This letter describes the fabrication and characterization of a silicon-on-insulator all silicon rib waveguide photodetector with sensitivity at 1550 nm. Response at the subbandgap wavelength is provided through the introduction of deep levels via Se ion implantation. Se ions were implanted into the waveguide using an ion beam energy of 240 keV at a dose of . The most...
A hard layer which is rich in niobium and carbon on the surface of TiAl based alloy was formed after plasma Nb alloying followed by plasma carburization. The process parameters of plasma Nb alloying and plasma carburization were modified. This paper investigates diffusion of C atoms on TiAl(010) surface with and without Nb which is transition metal element by using first-principles pseudo potential...
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