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Ge MOS capacitors with tri-layer gate dielectric are proposed by using GeON interlayer, TaON sandwich layer, and HfTiON high-k dielectric. Very small capacitance equivalent thickness (0.79~0.91 nm) is achieved. Experimental results show that the NO pretreated sample exhibits the best electrical properties, such as low interface-state density (5.4 × 1011 cm-2 eV-1), low gate leakage current density...
In this paper, Si-MOS capacitors with HfTiO/SiON stack gate dielectric were fabricated by using Si-surface thermal passivation in NO and N2O ambients respectively and reactive co-sputtering technology. Results show that the sample pretreated in NO ambient has excellent interface properties, low gate leakage current density and high reliability. This is attributed to the formation of a SiON interlayer...
Bias temperature instability of TiN/HfOx/Pt resistive random access memory (ReRAM) device is investigated in this work for the first time. As temperature increases (up to 100°C in this work), it is observed that: (1) leakage current at high resistance state (HRS) increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a...
The paper reports the impact of TiN metal gate composition (Ti-rich vs. N-rich) and preparation methodology (atomic layer deposition-ALD vs. physical vapor deposition -PVD) on its thermal stability with HfO2 high-K dielectric, via both physical characterization (X-ray Photoelectron Spectroscopy-XPS, High Resolution TEM combined with Electron Energy Loss Spectroscopy-EELS), and electrical characterization...
A high-frequency (HF) isolated DC/AC converter was proposed as the interface between a small-scale PMSG-based wind turbine generation system (WTGS) and a single-phase utility line. In this paper after a brief review of this configuration, different options of the multi-cell operation of this converter for high power wind generation applications are discussed. The effect of multi-cell operation on...
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