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Graphene/silicon (Gr/Si) configurations form Schottky junctions and should be a promising structure for high-performance electronics and optoelectronics. Here we presented a study on the properties of Gr/Si Schottky junctions by thermal annealing and air exposing. It was found that the ideal factor and the Schottky barrier height were lowered after vacuum annealing and increased after exposing in...
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