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SH mode on SiO2/Al/LiNbO3 structure is studied because of their sufficient electromechanical coupling factor (K2) and good temperature coefficient of frequency (TCF). Authors proposed the suppression method of the spurious response of the Rayleigh mode and the transverse mode for the narrow duplex gap application. For the narrow duplex gap application, SiO2 thickness must be increased to achieve the...
The transverse-mode spurious responses could be suppressed successfully by the selectively SiO2 removal at the dummy region. This paper discusses the suppression mechanism of the transverse-mode spurious responses by the selectively SiO2 removal technique. The SAW field distribution was analyzed for the SiO2/Al/LiNbO3 structure. The field analysis indicated that the selectively SiO2 removalenhances...
This paper describes a suppression of transverse-mode spurious responses for zero temperature coefficient of frequency (TCF) surface acoustic wave (SAW) resonator on a SiO2/Al/LiNbO3 structure. We investigated to use thinning of SiO2 on the dummy electrodes and studied how the transverse-mode responses change with remaining SiO2 thickness h on the dummy electrode region. As the results, we could realize...
This paper describes a good temperature coefficient of frequency (TCF) surface acoustic wave (SAW) resonator on a SiO2/Al/LiNbO3 structure. We studied the dependence of TCF and electromechanical coupling factor (K2) of shear-horizontal (SH) SAW on the SiO2 thickness, where the SiO2 shape control technique is applied to suppress spurious responses caused by Rayleigh-mode. As the results, we could realize...
A SiO2/Al/LiNbO3 structure has a large electromechanical coupling factor (K2) and good temperature coefficient of frequency (TCF) for the UMTS Band I application. However, the SiO2/Al/LiNbO3 structure also supports two unwanted spurious responses; one is caused by the Rayleigh-mode and the other by the transverse-mode. As the authors have previously discussed, the Rayleigh-mode spurious response can...
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