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We succeeded in preparing a 21-μm-thick GaN layer of high crystalline quality and with small in-plane stress on a 2′′ sapphire substrate by hydride-vapor phase-epitaxy (HVPE) in a vertical atmospheric-pressure reactor with a bottom-fed design. An ∼5-μm-thick GaN template layer grown by metalorganic chemical vapor deposition (MOCVD) was employed. At 1090°C, the HVPE growth rate was gradually increased...
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