The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A method in which single‐crystalline functional semiconductor material can be grown on amorphous surfaces is described by Jie Song and co‐workers on page 1285. Selectively defined layers of GaN are grown by metal‐organic chemical vapor deposition on SiO2/Si(100) substrates utilizing the evolutionary selection of grains, enabling the formation of semiconductor crystals suitable for use in electronic...
A method for growth of large‐area, selectively defined, single‐crystal semiconductor material on an amorphous template has been demonstrated. In two steps, the degrees of freedom in crystal orientation have been reduced by the principle of evolutionary selection, starting with the deposition of a textured aluminum nitride seed on SiO2, and the longitudinal growth of gallium nitride single crystals...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.