The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have developed high-performance 1.3 mum-band laser diodes on an InGaAs ternary substrate with a low indium content (In: 0.1) grown by a novel bulk crystal growth technique (TLZ method). This laser operates at a long wavelength of 1.28 mum and at temperatures up to 195degC by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95degC and 95 K from 95...
Emission wavelengths longer than 2.1 mum and CW output power higher than 8 mW at 25degC were achieved in strained InGaAs MQW DFB lasers grown by MOVPE using an Sb surfactant
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.