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In the work the properties of grain-oriented layers of the cubic phase of silicon carbide and SiGeC nanoscale basic region formed under them at the inner boundary of the 3C-SiC/SiGeC/Si(100) heterojunction are discussed. The structures are obtained in the process of low-temperature (below 1000 °C) carbidization of the silicon surface in vacuum with the use of molecular beams of hydrides and hydrocarbons...
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