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We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness...
We introduce a one-side metallization scheme for monocrystalline Si thin-film modules from layer transfer. The mini-modules have an area of 5/spl times/5 cm/sup 2/ and consist of five series-connected cells with a thickness of 18 /spl mu/m. We achieve a short-circuit current of 145 mA (29 mA/cm/sup 2/ per cell) and an open-circuit voltage of 3098 mV (619.3 mV per cell) under AM1.5g-illumination at...
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