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This paper presents the design, manufacture and characterization of connector-less 1200 V SiC MOSFET half-bridge power modules based on AlN DCB substrate. The modules contain four MOSFETs and no external antiparallel diodes. They are rated for a current of 40 A and include a shunt. Static and dynamic measurement results are presented. Multiphysics simulations are used to validate the measured data...
This paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented onto the substrate in order to minimise parasitic inductances. Thus, the module is especially suitable for high-frequency operation such as inductive energy transfer and inverter systems for renewable energies and electrical vehicles...
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