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We have studied the influence of Si surface on damage generation and recombination using classical molecular dynamics simulations. We have found that, when approaching to the surface, damage generation is enhanced due to weaker atomic bonding. Furthermore, generated damage is more stable as it reveals the mean lifetime of defects and the activation energy for recombination. Therefore near the surface...
Evolution of electrically active dose, sheet resistance and hole mobility has been investigated for high B concentration profiles in pre-amorphized Si. For this purpose, Hall measurements combined with atomistic simulations have been performed. An apparent anomalous behavior has been observed for the evolution of the active dose and the sheet resistance, in contrast to opposite trend evolutions reported...
We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have simulated a total of 1000 cascades of monatomic boron and an equivalent of 56 cascades of octadecaborane in order to have good statistics...
We analyze the effects of junction formation by low-temperature solid phase epitaxial regrowth in NMOS transistors. Atomistic simulations indicate that the high concentration of Si interstitials associated with the end of range (EOR) defects favors the local formation of boron clusters just beyond the amorphous/crystalline interface, in agreement to sheet resistance measurements. Thus, EOR defects...
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