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In order to fulfill the stringent requirements for ultra-shallow junction formation and proper defect removal needed for future Si devices, molecular and cold implants have arisen as new technological strategies for dopant incorporation. In this work we have used different atomistic simulation techniques within a multiscale scheme to study the phenomena governing the damage generation in these types...
Ion implantation is a technique commonly used in the fabrication of semiconductor devices. The introduction of ions generates a large concentration of defects in the Si lattice. The presence of these defects can adversely affect the device performance. Conversely, in more recent years, ion induced defects have opened the possibility of new Si based optoelectronic devices. The areas which are currently...
Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters...
Evolution of electrically active dose, sheet resistance and hole mobility has been investigated for high B concentration profiles in pre-amorphized Si. For this purpose, Hall measurements combined with atomistic simulations have been performed. An apparent anomalous behavior has been observed for the evolution of the active dose and the sheet resistance, in contrast to opposite trend evolutions reported...
Source/drain formation in ultra-thin body devices by conventional ion implantation is analyzed using atomistic simulation. Dopant retention is dramatically reduced by backscattering for low-energy and low-tilt angles, and by transmission for high angles. For the first time, molecular dynamics and kinetic Monte Carlo simulations, encompassing the entire Si body, are applied in order to predict damage...
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