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In this work we propose a methodology to analyze the elastic energy interaction at the atomic level between Si self-interstitials and extended defects in crystalline Si. The representation of this energy in maps in 2D planes shows the anisotropic nature of the elastic interaction. This elastic energy maps can be used to understand diffusion trajectories of Si self-interstitials around extended defects...
We have studied the influence of Si surface on damage generation and recombination using classical molecular dynamics simulations. We have found that, when approaching to the surface, damage generation is enhanced due to weaker atomic bonding. Furthermore, generated damage is more stable as it reveals the mean lifetime of defects and the activation energy for recombination. Therefore near the surface...
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