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Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation...
Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding...
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