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Fluorine ions have been implanted into SiO 2 /Si with an energy of 30 keV at doses of 0.5 and 1 x 10 17 ions/cm 2 . Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO 2 /Si did not agree with the predicted Gaussian profiles and showed...
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