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The model DC circuit breaker composed of an insulated gate bipolar transistor has been constructed. Consideration was given to the current-limiting process, i.e., to establish a method for limiting the direct current to zero. This method was achieved by decreasing gate-emitter voltage with a passage of time at a certain time-constant tge. The breaking experiment of the rush-current interruption of...
We have done research for the purpose of improving of total performance of 1200V light punch-through (LPT) IGBTs that utilizing carrier stored trench-gate bipolar transistor (CSTBTtrade). This paper reports that the total loss can be dramatically improved by a vertical shrink of LPT-CSTBT to a structure with a thin N drift and a new backside collector layer possessed of both reinforced N buffer and...
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