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Chemical bonding states of doped impurities, boron (B) and arsenic (As), in silicon (Si) shallow junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation of the impurities, and to clarify depth profiles of concentration...
A new self-regulatory plasma doping (SRPD) technique with B2H6/helium gas plasma has been successfully developed that provide conformal doping for fins and precise controllable ultra-shallow doping for planar FET. Manufacturing level of process controllability (<1% on dose) of the new SRPD has been realized, and advantage of the SRPD has been verified with FinFETs with metal/high-k gate stack and...
We measured HX-PES (Si 1s) of ultra low energy ion implantation (I/I) samples combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding...
A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained...
We measured HX-PES (Si 1s) of low energy ion implanted silicon substrate before and after spike RTA, and compared it with that of plasma doped (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. After spike RTA, PD sample showed superior impurity activation than that of I/I sample. Both I/I sample and PD sample showed...
Ultra-shallow P+/N junctions were formed by boron doping using plasma doping method combined with activation annealing using spike-RTA, flash lamp annealing or laser annealing. The junctions formed with flash lamp annealing or laser annealing were promising and superior to those formed by conventional low energy ion implantation method from the viewpoints of shallowness, abruptness and low sheet resistance...
In this work, combination of the plasma doping method with flush lamp annealing (FLA) or solid-state laser annealing (ASLA) is shown to be very promising technique to form ultra-shallow and low-resistive junctions for future nano CMOS. Amorphisation by He plasma (He-PA process) is shown to be effective for obtaining shallow junction depth (Xj) and low sheet resistance (Rs). The He-PA process is found...
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