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The air-sensitivity of the poly-Si interface in MOS transistors and its impact on the electrical properties are studied. It is found that the gate leakage localized near the side of air-exposed edges is possibly caused by air-induced degradation of the poly-Si interface, which supplies mobile NH3-like species to the gate edge side surface, resulting in the formation of a non-stoichiometric as well...
The diffusion behavior of hydrogen contained in the surface layer of oxynitrides serving as models for poly-Si/oxynitride interfaces in MOS transistors was studied with H depth profiling by nuclear reaction analysis. The poly-Si/oxynitride interface is found to contain mobile and stable H species. The mobile H species tends to desorb in vacuum at room temperature. A TDDB improvement caused by resting...
We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N2O gas, respectively. The N2O-oxynitride shows a stronger resistance against the approach of the SiO2/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates...
Interface characteristics with respect to nitrogen-distribution and hydrogen-diffusion behavior were evaluated for two model tunnel oxides nitrided by NO and N2O gas, respectively. Nuclear reaction analysis reveals a different resistance of the two interfaces against the approach by H, which allows us to correlate the characteristic N-distribution of the tunnel oxide with a H-diffusion barrier. From...
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