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We report on the fabrication of GaInN‐based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit‐free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open‐circuit voltage of the soalr cells...
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