The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.
To understand the growth mechanism and the effect of catalysts in growing III–V epitaxial nanowires, GaAs (111)B substrates with Au thin films were annealed in a molecular beam epitaxy (MBE) system. Scanning/transmission electron microscopy (SEM/TEM) investigations indicate that, during annealing, the Au catalysts were formed and affect significantly the surface morphology of the GaAs substrates.
To explore the growth mechanism and the effect of non-gold catalysts in growing III–V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.
Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced...
The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.
Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510°C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400°C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show...
The growth mechanism and cathodoluminescence of dual phase ZnS tetrapod tree-like heterostructures with the zinc blende structured trunks and the hexagonal wurtzite structured branches were prepared and characterised. The polarity induced growth of tetrapod ZnS trees was confirmed by advanced electron microscopy. Two strong UV emissions (centred at 3.68 and 3.83 eV) have been observed at room temperature,...
We report the effect of V/III ratio and nanowire diameter on the crystal structure and optical properties of InP nanowires. Time -resolved photoluminescence studies have revealed that wurtzite nanowires show longer carrier lifetimes than zinc-blende ones.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the...
Semiconductor nanowire (NW) heterostructures are increasingly important building blocks for electronic and optoelectronic devices. III-V nanowires with attention to well-controlled growth parameters, high structural quality and high optical quality NWs with unusually long recombination lifetimes can be achieved. We probe these NWs experimentally with both CW and time-resolved photoluminescence spectroscopy...
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation...
Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensive attention due to both the intriguing fundamental properties and their potential applications in optoelectronic devices. GaAs NWs grown by metalorganic chemical vapor deposition (MOCVD) often exhibit tapered and kinked morphologies, depending on growth temperature. However, straight NWs of uniform...
The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.