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Hardware realization of in‐memory computing for efficient data‐intensive computation is regarded as a promising paradigm beyond the Moore era. However, to realize such functions, the device structure using traditional Si complementary metal–oxide–semiconductor (CMOS) technology is complex with a large footprint. 2D material‐based heterostructures have a unique advantage to build versatile logic functions...
Memory Cells
In article number 2106321, Yanqing Wu and co‐workers report the smaller footprint of nonconventional computing‐in‐memory devices based on black phosphorus and rhenium disulfide transistors. By adopting the charge‐trapping mechanism, four‐transistor nonvolatile ternary content‐addressable memory cells are realized for parallel search operations with reduced complexity and thermal budget...
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