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DC stressing of molecular beam epitaxy (MBE)-grown high electron mobility transistors (HEMTs) is found to degrade device performance primarily due to increased defect/trap formation. Using constant drain-current deep level optical/transient spectroscopy (CID-DLOS/DLTS) methods, a specific virtual-gate related electron trap with energy EC-0.45 eV was observed to increase in concentration following...
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