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The etching of GaP, whether in strong HNO3 or in strong HCl is severely inhibited, whereas mixtures of HNO3/HCl are commonly employed as etchants for chemical polishing. The etching mechanism of n-GaP in aqua regia (3HCl/1HNO3) has been investigated. Aqua regia etching may occur by accomplishing both the following two processes :(1) oxidation and (2) dissolution. First, the nascent chlorine and nitrate...
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