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Efficient Terahertz output is generated from InGaN/GaN dot-in-a-wire light emitting diodes (LEDs) grown on Si(111). Under reverse bias, the THz output power is enhanced more than 4 times.
We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.
Efficient conversion between fundamental and high-order modes propagating in multimode optical fiber is important for applications in nonlinear optics. For example, up-conversion in a nonlinear waveguide can be exploited for reaching single-photon detection levels [1]. However, high-order modes could result in destructive interferences among the up-converted modes [2]. On the other hand, it is equally...
We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.
InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
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