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The spectral photoresponse characteristics for visible blind GaN/AlGaN p-i-n photodiode have been numerically studied. Effects of the absorption layer thickness and the n-layer thickness on the photoresponse spectra have been investigated. Our work shows that the absorption layer thickness and n-layer thickness have important impact on the peak value of photoresponse spectra and rejection ratio of...
An InGaAs/InP single-photon avalanche photodiode (SPAD) with a high differential gain was achieved by changing the multiplication region thickness and the sheet charge density of the charge layer. A gain of more than 100 was obtained. The DCR is less than 1k with the frequency up to 250 kHz.
The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied. Effects of mesa depth, substrate thickness, pixel dimension and channel length on the photoresponse and crosstalk have been investigated. Our work shows that the spectral photoresponse and crosstalk are largely dependent on the geometric design of device.
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
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