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Nanocrystalline cubic SiC(β-SiC) films were grown on silicon (100) substrate by catalytic chemical vapor deposition (Cat-CVD) at a temperature as low as 300 o C with a pre-carbonization process. To enhance nucleation density of β-SiC, a buffer layer was made by carbonizing the surface of Si substrate. From the comparison between carbonized and non-carbonized sample, the pre-carbonization process...
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