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Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility muFE improvements of ~ 86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N2 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surface...
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