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Here we show, for the first time, a significant improvement of switching characteristics in a 1.2‐kV SiC Schottky barrier diode‐wall integrated trench MOSFET (SWITCH‐MOS) by the application of a Kelvin source (KS) connection. Turn‐on loss (Eon) was greatly reduced, with superior Eon‐dVDS/dt trade‐off characteristics at a moderate dVDS/dt value of about 10 kV/μs, because the SWITCH‐MOS with KS achieves...
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