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In this paper, a 2-D analytical model for the drain current of a dual material gate tunneling field-effect transistor is developed incorporating the effects of source and drain depletion regions. The model can forecast the effects of drain voltage, gate work function, oxide thickness, and silicon film thickness. The proposed model gives analytical expressions for the surface potential, electric field...
In this paper, we have developed a 2-D model for the DC drain current of a tunneling field-effect transistor (TFET) considering the source and the drain depletion regions. Analytical expressions are derived for the surface potential, electric field and the band-to-band generation rate. The drain current is obtained by numerically integrating the generation rate across the entire device. The model...
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