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The attempt to grow 3C‐SiC thin films on silicon substrates has become an area of significant scientific interest, largely as a consequence of the impressive electrical properties that this polytype displays. In this paper, we have utilized low‐energy (20 keV) high‐fluence carbon implantation and a subsequent annealing step to form layers of 3C‐SiC directly on a silicon surface, and have investigated...
The electrical conductivity of ZnO films deposited on Si by the RF sputtering technique were modified by low-energy hydrogen implantation. Hydrogen ions were implanted at 25keV into various ZnO films with doses ranging from 1×10 16 to 1.0×10 17 ionscm −2 . High resolution quantitative hydrogen depth profiles of the un-doped and doped samples were measured non-destructively...
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