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The formation of various uncommon shaped voids along with regular triangular and square voids in the epitaxial 3C-SiC films on Si has been investigated by optical microscopy and atomic force microscopy. Heteroepitaxial growth of 3C-SiC films on Si (001) and (111) substrates has been performed using hexamethyldisilane in a resistance-heated chemical vapor deposition reactor. The influence of the orientation...
This paper discusses the growth and characterization of 3C-SiC films on Si (100) and (111) substrates using hexamethyldisilane (HMDS) as the source material in a resistance-heated furnace as well as the formation and microstructure of various types of unusual defects. Apart from common triangular and square voids, some unusual shaped voids like hexagonal, truncated octahedron, etc. and some irregular...
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