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We propose Multi Gate Oxide — Dual Work-Function (MGO-DWF)-MOSFET which is suitable for low power AB-class RF power amplifier (RF PA). This was examined for the first time by comparing with a standard Cascode connection circuitry composed of LV- and HV- MOSFETs. Dramatically improved FMAX (150 GHz) with sufficient drain break-down voltage (VBD) was experimentally confirmed in a practical device structure...
This paper describes the performance of ad-hoc wireless network on 2.4 GHz band in the real buildings and homes. The communication module based on the IEEE802.15.4 standard was developed and installed into four kinds of buildings with different structures. The attenuation of the signal resulting from obstacles in the real world and the coexistence of 802.15.4 with other products of the same radio...
This paper presents a feasibility study on VCO using RF SiP technology, which is an RF application of stacked SiP. An off-chip inductor is implemented in a separated chip, and measured Q factor is 130. A phase noise is -119 dBc/Hz at 1 MHz offset for a 5.84-GHz carrier frequency, and frequency tuning range is 5.73 GHz-5.95 GHz. Power consumption is 1.93 mW, and 180 nm CMOS process is utilized. FOM...
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