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Low cost, high-resolution and wideband millimeter wave receiver systems attain more and more attention for commercial and military applications. We present a broadband receiver module operating in the W-band for radar and imaging applications. Its compact packaging compared to traditional split block technique is realized using printed circuit board technology and a high density polyethylene lens...
This contribution presents a full chip set dedicated to high data rate indoor wireless communication at a carrier frequency of 300 GHz. The analog frontend consists of a three-chip solution, namely a transmitter, receiver and local oscillator frequency multiplier. The active millimeter-wave monolithic integrated circuits are realized in a GaAs-based metamorphic high electron mobility transistor technology...
This paper presents the design and measured performance of an H-Band (220–325 GHz) submilimeter-wave monolithic integrated circuit (S-MMIC) implementing a balanced variable-gain low-noise amplifier (VGA) based on Tandem-X couplers for use in next generation communication systems. This amplifier will be used as first stage in an integrated wideband receiver for 300 GHz wireless communication for indoor...
Two G-band (140 to 220 GHz) injection-locked frequency divider (ILFD) monolithic microwave integrated circuits (MMICs) have been developed in a 35nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process for application in signal sources of next generation multi gigabit per second communication links and high-resolution imaging systems. Both devices are based on a cascode divider...
A down-converter MMIC in 100 nm gate length AlGaN/GaN HEMT technology achieves an input-related 1-dB compression point of 13 dBm at a center frequency of 77 GHz, providing high linearity for radar applications. The single-ended fundamental mixer without pre- or post-amplification shows 8 dB conversion loss when driven with 13dBm of LO power within an RF frequency range exceeding 75 to 81 GHz. The...
For broadband signal generation in the high millimeter-wave range we present a frequency multiplier-by-eight MMIC. The measured output tuning bandwidth from 220 to 320 GHz almost covers the entire WR-03 waveguide band (220–325 GHz). On chip interstage and post amplification result in a maximum output power of 2.5 dBm at an output frequency of 260 GHz. Due to the high multiplication factor in-band...
A compact and broadband high-gain amplifier has been developed and is presented in this paper. It is realized as millimeter-wave monolithic integrated circuit (MMIC) and makes use of metamorphic high electron mobility transistor (mHEMT) technology. The amplifier employs an advanced power combining approach allowing for broadband designs. At 115 GHz, the MMIC provides a gain of 26dB and at 120 GHz...
In this paper three versions of a variable gain amplifier (VGA) monolithic millimetre-wave integrated circuit (MMIC) are presented. They make use of 100 nm gate-length AlGaN/GaN-based high electron mobility transistors (HEMTs) grown on SiC. The MMICs operate in the 75 to 110 GHz band and have a centre-frequency of 94 GHz. Different phase compensation techniques, which are proposed in literature are...
An active frequency tripler MMIC achieving an output frequency of 330 GHz is presented. With the use of integrated post- amplification the frequency tripler generates an average output power of −0.4 dBm in the output frequency range from 255 to 330 GHz, corresponding to an absolute bandwidth of 75 GHz. At 288 GHz the measured output power is 0.6 dBm with an input power of 10 dBm and with an input...
The submillimeter-wave frequency multiplier-by-four consists of the monolithic integrated cascade of a balanced doubler, a cascode buffer amplifier, and a single-ended frequency doubler. Without any post-amplification, an output power of −14.3 dBm is achieved in a 3-dB output frequency range from 435 to more than 480GHz, resulting in a >45GHz bandwidth. The balanced frequency doubler uses a coupled-line...
In this paper, we present monolithic integrated I-Q receive and transmit MMICs for wireless data transmission in the frequency range around 240 GHz. The chipset features an RF bandwidth of more than 80 GHz which corresponds to an IF bandwidth of more than 40 GHz. This enables the direct up and down-conversion of broadband IF signals like on-off keyed modulations. The receiver, as well as the transmitter,...
A high linearity I/Q bi-directional mixer MMIC using a Lange coupler to generate the 90° phase shift between the I and Q ports for E-band communication systems has been successfully realized in a 50nm mHEMT technology. The mixer achieves a measured conversion gain of −11 dB without pre- or post-amplification and an IF bandwidth of 6 GHz. An on-wafer linearity measurement shows no compression behavior...
AlGaN/GaN-based high electron mobility transistors, when scaled to small gate lengths, may exploit the material's high speed properties to achieve operating frequencies in the high millimeter-wave frequency range. Besides power amplification, these transistors can also be used to implement low noise amplifiers, which profit from the high breakdown voltages in terms of amplifier linearity and robustness...
The paper presents the design, implementation and measured performance of a 77 GHz heterodyne receiver MMIC realized in a new AlGaN/GaN on s.i. SiC HEMT technology with 100 nm gate length and maximum cutoff frequencies fT and ƒmax of 80 and >200 GHz, respectively. The compact single-chip receiver combines a four-stage low noise amplifier with a resistive down-conversion mixer and a frequency doubler...
For application at frequencies around 140 GHz, a solid-state amplifier with variable output matching was developed. Its output matching network makes use of a capacitively loaded shunt switch in series and a shunt switch in parallel. By variation of the control voltages of the series and parallel switches, the output impedance continuously can be changed in a wide range. This makes the circuit very...
An active frequency-tripler MMIC achieving an output frequency of 315 GHz is presented. Without the use of post-amplification the frequency-tripler generates an average output power of −10.1 dBm in the output frequency range from 285 to 315 GHz. At 303 GHz the measured output power is −9.3 dBm with an input power of 10 dBm. The comparison to the simulated results shows the quality of the underlying...
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