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This article presents a study on the isolation performance of the trench‐type deep n‐well (DNW) dual guard ring (GR) and its effect on the suppression of the substrate digital noise coupling on a low noise amplifier (LNA) based on measurement and TCAD simulation. The trench‐type DNW dual GR, in which the DNW is formed beneath the ring‐shaped n‐well region only, can be adopted for protecting the noise‐sensitive...
The effects of hot carrier stress on the characteristics of NMOSFETs and low noise amplifier (LNA) in 65 nm CMOS technology are investigated. The method of determining the stress condition is explained to achieve the maximum substrate current where maximum damage is generated in NMOSFETs. The increase in threshold voltage caused by hot carriers leads to a drop in the biasing current of the transistors...
In this letter, it is proposed that gm2/ID, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoM for optimizing low-noise amplifier (LNA) performance. From a simple small-signal equivalent circuit, signal gain, noise figure, and power consumption equations are derived analytically and verified with the measurement results of the...
In this paper, design approach for a 5.8-GHz power-constrained CMOS low-noise amplifier using 0.13-mum process technology is presented. To evaluate the overall performance of an LNA, figure of merit (FoM) is adopted. Figure of merit includes power gain, noise figure, power dissipation and the operation frequency. Each performance factor of FoM is analytically expressed in device parameters. We show...
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